25 GCA200AA120 igbt module sanrex igbt module GCA200AA120 is designed for high speed, high current switching applications. this module is electrically isolated and contains two igbts connected in series with a fast switching, soft recovery diode (trr= 0.1 s ) reverse connected across each igbt. ic 200a v ces 1200v v ce sat 3.0v typ tf 0.10 s typ soft recovery diode applications inverter for motor control (vvvf) ups, ac servo dc power supply, welder maximum ratings unless otherwise tj 25 symbol item v ces collector-emitter voltage conditions with gate terminal shorted to emitter ratings GCA200AA120 unit v 1200 v ges gate-emitter voltage with collector shorted to emitter v 20 ic collector current dc pulse ms a 200 i cp 400 ic reverse collector current a 200 p t total power dissipation tc 25 w 1500 tj junction temperature 150 tstg storage temperature 40 125 v iso isolation voltage r.m.s. a.c. minute v 2500 mounting torque mounting 6 terminal 5 recommended value 2.5 3.9 25 40 n m kgf cm 4.7 48 recommended value 1.5 2.5 15 25 2.7 28 mass typical value g 400 eiectrical characteristics unless otherwise tj 25 symbol item i ges gate leakage current conditions v ge 20v v ce 0v ratings min. typ. max. unit na 500 i ces collector cut-off current v ce 1200v v ge 0v ma 1.0 0 v br ces collector-emitter breakdown voltage v ge 0v ic ma v 1200 v ge th gate threshold voltage v ce 10v ic 20ma v 4.5 3.0 0 7.5 0 v ce sat collector-emitter saturation voltage ic 200a v ge 15v v 20 .00 3.4 0 cies input capacitance v ce 10v v ge 0v f 1mhz nf 0.10 40 .00 tr switching time rise time turn-on delay time fall time turn-off delay time ic 200a v ge 15v / 5v vcc 600v r g 1.6 s 0.15 0.25 td on 0.10 0.35 tf emitter-collector voltage 0.35 0.35 td off 2.20 0.50 v ecs ic 200a v ge 0v v 0.15 3.50 trr reverse recovery time ic 200a v ge 10v di / dt 400a / s s 0.25 rth j-c thermal resistance igbt-case / w 0.08 diode-case 0.20 unit mm ul;e76102 m
26 GCA200AA120
27 GCA200AA120
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